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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

Date

2017
Journal article
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dc.contributor.authorGaubas, E.
dc.contributor.authorCepirus, T.
dc.contributor.authorDobrovoliskas, D.
dc.contributor.authorMalinauskas, T.
dc.contributor.authorMeskauskaite, D.
dc.contributor.authorMiosojedovas, S.
dc.contributor.authorPavlov, J.
dc.contributor.authorRumbauskas, V.
dc.contributor.authorMickevicius, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorZhao, Ming
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorZhao, Ming
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.date.accessioned2021-10-24T04:56:47Z
dc.date.available2021-10-24T04:56:47Z
dc.date.issued2017
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28374
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-6641/aa96e8
dc.source.beginpage125014
dc.source.issue12
dc.source.journalSemiconductor Science and Technology
dc.source.volume32
dc.title

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

dc.typeJournal article
dspace.entity.typePublication
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