Browsing by Author "Gelatos, J."
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Publication Cu resistivity scaling limits for 20 nm copper damascene lines
Proceedings paper2007, IEEE International Interconnect Technology Conference - IITC, 4/06/2007, p.49-51Publication Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Proceedings paper2009-12, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.301-304Publication Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.861-864