Browsing by Author "Germain, Marianne"
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Publication A hard switching VIENNA boost converter for characterization of AlGaN/GaN/AlGaN power DHFETs
Publication A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon
Proceedings paper2010, IEEE Energy Conversion Congress and Exposition - ECCE, 12/09/2010, p.3296-3302Publication A load-pull wafer-mapper
Proceedings paper2008, IEEE MTT-S International Microwave Symposium Digest, 15/06/2008, p.113-119Publication A very compact power amplifier using GaN HEMTs in multi-layer thin-film technology
Proceedings paper2010, Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - INMMiC, 26/04/2010, p.37-40Publication AlGaN Extrem-UV detectors for space applications
Proceedings paper2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.291-294Publication AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Proceedings paper2008, Optical Sensors 2008, 7/04/2008, p.70030NPublication AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
Publication AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
Publication AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range
Proceedings paper2010, Optical Sensing and Detection, 12/04/2010, p.772617Publication AlGaN/GaN HEMT : when MOVPE meets the device challenge
Publication AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Proceedings paper2007, 12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII, 3/06/2007Publication AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Publication AlGaN/GaN HEMT: the growth challenge
Oral presentation2002, IEEE GaAs 2002 Conference: Workshop on Wide Bandgap SemiconductorsPublication AlGaN/GaN HEMTs on Si substrates: Can they overcome the thermal limit?
Proceedings paper2007-05, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.277-280Publication AlGaN/GaN HEMTs with backside Schottky contact
Proceedings paper2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.215Publication AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Journal article2008, Japanese Journal of Applied Physics, (47) 3, p.1553-1555Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Publication AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
Publication AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
Publication AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation