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Browsing by Author "Gossner, Harald"

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    A quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices

    Sarkar, Deblina
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    Thijs, Steven  
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    Linten, Dimitri  
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    Russ, Christian
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    Gossner, Harald
    Proceedings paper
    2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.808-811
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    Characterization and optimization of sub-32nm FinFET devices for ESD applications

    Thijs, Steven  
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    Tremouilles, David
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    Russ, Christian
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    Griffoni, Alessio
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    Collaert, Nadine  
    Journal article
    2008, IEEE Transactions on Electron Devices, (55) 12, p.3507-3516
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    Design methodology for FinFET GG-NMOS ESD protecction devices

    Thijs, Steven  
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    Russ, Christian
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    Tremouilles, David
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    Linten, Dimitri  
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    Scholz, Mirko
    Proceedings paper
    2008-05, 2nd International ESD Workshop - IEW, 12/05/2008
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    Design methodology of FinFET devices that meet IC-level HBM ESD targets

    Thijs, Steven  
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    Russ, Christian
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    Tremouilles, David
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    Linten, Dimitri  
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    Scholz, Mirko
    Proceedings paper
    2008-09, 30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 7/09/2008, p.295-303
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    ESD-aspects of FinFETs and other most advanced devices

    Russ, Christian
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    Gossner, Harald
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    Thijs, Steven  
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    Griffoni, Alessio
    Oral presentation
    2010, International ESD Workshop - IEW
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    Impact of ESD on an electrical system ESDA WG26 working group results

    Escudie, Fabien
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    Caignet, Fabrice
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    Ashton, Robert
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    Lin, Yen-Yi
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    Orr, Benjamin
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    Notermans, Guido
    Oral presentation
    2016, International ESD Workshop - IEW
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    Understanding the optimization of sub-45nm FinFET devices for ESD applications

    Tremouilles, David
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    Thijs, Steven  
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    Russ, Christian
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    Schneider, J.
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    Duvvury, Charvarka
    Proceedings paper
    2007, EOS/ESD Symposium Proceedings, 16/09/2007, p.408-415

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