Browsing by Author "Goubert, L."

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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

Van Meirhaeghe, R. L.
;
Vanalme, G. M.
;
Goubert, L.
;
Cardon, F.
;
Van Daele, P.
Proceedings paper
1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.619-622
A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

Vanalme, G. M.
;
Goubert, L.
;
Van Meirhaeghe, R. L.
;
Cardon, F.
;
Van Daele, Peter
Journal article
1999, Semiconductor Science and Technology, (14) 9, p.871-877
A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers

Van Meirhaeghe, R.
;
Vanalme, G.
;
Goubert, L.
;
Cardon, F.
;
Van Daele, P.
Oral presentation
1998, MRS Spring Meeting 1998. Symposium S: Nanoscale Characterization Using Scanning Probes; April 13-16, 1998; San Francisco, CA, US
A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching

Goubert, L.
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Van Meirhaeghe, R. L.
;
Clauws, P.
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Cardon, F.
;
Van Daele, Peter
Journal article
1997, Journal of Applied Physics, (82) 4, p.1696-1699
An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices

Van Meirhaeghe, R. L.
;
Goubert, L.
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Fiermans, L.
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Laflère, W. H.
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Cardon, F.
;
De Dobbelaere, Peter
Proceedings paper
1995, Microscopy of Semiconducting Materials 1995, 20/03/1995, p.641-644