Browsing by Author "Hackbarth, T."
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Publication Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
;Fobelets, Kristel ;Jeamsaksiri, Wutthinan ;Papavasilliou, C. ;Vilches, T.Gaspari, V.Journal article2004, Solid-State Electronics, (48) 8, p.1401-1406Publication Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation
;Holländer, B. ;Buca, D.M. ;Lenk, S. ;Mantl, S. ;Herzog, H.J. ;Hackbarth, T.; Oral presentation2004, 14th International Conference on Ion Beam Modification of Materials - IBMMPublication Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing
;Mantl, S. ;Holländer, B. ;Hüging, N. ;Luysberg, M. ;Lenk, St. ;Hogg, S.M. ;Herzog, H.-J.Hackbarth, T.Oral presentation2003, 12th EURO-CVD WorkshopPublication Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
;Mantl, S. ;Holländer, B. ;Hüging, N. ;Luysberg, M. ;Lenk, S. ;Hogg, S.M. ;Herzog, H.J.Hackbarth, T.Meeting abstract2003, Abstracts Book ICSI3: 3rd International Conference on SiGe(C) Epitaxy and Heterostructures, 9/03/2003, p.117