Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing

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Author(s)

Mantl, S.

;

Holländer, B.

;

Hüging, N.

;

Luysberg, M.

;

Lenk, St.

;

Hogg, S.M.

;

Herzog, H.-J.

;

Hackbarth, T.

;

;

Bauer, M.

Metrics

1971 since deposited on 2021-10-15

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Acq. date: 2025-12-08