Browsing by Author "Hakata, T."
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Publication 20-MeV alpha ray effects in AlGaAsP p-HEMTs
Proceedings paper2000, Proceedings of the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 11/10/2000, p.133-138Publication Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle
Journal article2001, Microelectronics Reliability, (41) 1, p.79-85Publication Degradation and recovery of alpha ray irradiated MOSFETs on SIMOX
Proceedings paper1997, Proceedings of the 8th International Symposium on Silicon-on-Insulator Technology and Devices, 31/08/1997, p.289-295Publication Degradation and recovery of In0.53Ga0.47As photodiodes by 1-MeV fast neutrons
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Kudou, T.Hakata, T.Journal article1996, IEEE Transactions on Nuclear Devices, (43) 6, pt.1, p.3019-26Publication Degradation and recovery of Si diodes by 20-MEV protons and 220-MEV carbon particles
Proceedings paper1998, Semiconductors for Room-Temperature Radiation Detector Applications II;, p.435-440Publication Degradation and recovery of Si1-xGex devices by irradiation
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Kudo, T.Hakata, T.Proceedings paper1995, Strained Layer Epitaxy - Materials, Processing and Device Applications, 17/04/1995, p.365-371Publication Degradation of InGaAs pin photodiodes by neutron irradiation
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Kudou, T.Kohiki, S.Journal article1996, Semiconductor Science and Technology, (11) 10, p.1461-1463Publication Degradation of MOSFETs on SIMOX by irradiation
Oral presentation1997, APSORC '97; October 6-9 , 1997; Kunamoto, Japan.Publication Degradation of MOSFETs on SIMOX by irradiation
Journal article1999, Journal of Radioanalytical and Nuclear Chemistry, (239) 2, p.357-360Publication Effect of irradiation on AlGaAs/GaAs p-HEMTs
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.288-291Publication Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes
Proceedings paper1998, 2nd International Conference on Materials for Microelectronics - ICMM, 14/09/1998, p.11-18Publication Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes
Journal article1999, Journal of Materials Science: Materials in Electronics, (10) 5_6, p.335-337Publication Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs
Journal article1998, IEEE Trans. Nuclear Science, (45) 6, p.2861-2866Publication Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs
Journal article1999, Physica B, 274, p.1034-1036Publication Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers
;Ohyama, Hidenori; ;Claeys, Cor ;Takami, Y. ;Hayama, Kiyoteru ;Hakata, T.Tokuyama, J.Proceedings paper1998, Epitaxy and Applications of Si-Based Heterostructures, 13/04/1998, p.99-104Publication Influence of the substrate on the degradation of irradiated Si diodes
Journal article1996, Physica Status Solidi A, 156, p.215-223Publication Irradiation induced lattice defects in Si1-xGex epitaxial devices
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Kudo, T.Hakata, T.Proceedings paper1995, ICDS-18. Proceedings 18th International Conference on Defects in Semiconductors, 23/07/1995, p.371-376Publication Proton irradiation effects on the performance of Si1-xGex devices
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Tokyama, J.Hakata, T.Journal article1996, Physica Status Solidi A, (158) 1, p.325-32Publication Radiation damage in AlGaAs/GaAs pseudomorphic HEMTs
Proceedings paper2000, 1999 5th European Conference on Radiation and Its Effects on Components and Systems - RADECS, 13/09/1999, p.295-298Publication Radiation damage in InGap/InGaAs p-HEMTs by 20-MeV alpha rays
Journal article1999, Journal of the Korean Physical Society, 35, p.S272-S274