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Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers
Publication:
Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers
Date
1998
Proceedings Paper
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2327.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ohyama, Hidenori
;
Simoen, Eddy
;
Claeys, Cor
;
Takami, Y.
;
Hayama, Kiyoteru
;
Hakata, T.
;
Tokuyama, J.
;
Kobayashi, K.
;
Sunaga, H.
;
Poortmans, Jef
;
Caymax, Matty
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Abstract
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1912
since deposited on 2021-10-01
Acq. date: 2025-10-24
Citations
Metrics
Views
1912
since deposited on 2021-10-01
Acq. date: 2025-10-24
Citations