Publication:

Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers

Date

1998
Proceedings Paper
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dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorHakata, T.
dc.contributor.authorTokuyama, J.
dc.contributor.authorKobayashi, K.
dc.contributor.authorSunaga, H.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-01T08:35:57Z
dc.date.available2021-10-01T08:35:57Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2825
dc.source.beginpage99
dc.source.conferenceEpitaxy and Applications of Si-Based Heterostructures
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage104
dc.title

Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers

dc.typeProceedings paper
dspace.entity.typePublication
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