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Browsing by Author "Halliyal, A."

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    Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack

    Degraeve, Robin  
    ;
    Kaczer, Ben  
    ;
    Houssa, Michel  
    ;
    Groeseneken, Guido  
    ;
    Heyns, Marc  
    ;
    Jeon, J. S.
    Proceedings paper
    1999, International Electron Devices Meeting. Technical digest; December 1999; Washington, D.C., p.327-330
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    Electrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers

    Houssa, Michel  
    ;
    Degraeve, Robin  
    ;
    Heyns, Marc  
    ;
    Kaczer, Ben  
    ;
    Groeseneken, Guido  
    ;
    Naili, Mohamed
    Oral presentation
    2000, Semicon Europe
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    Electrical properties of thin SiON/Ta2O5 gate dielectric stacks

    Houssa, Michel  
    ;
    Degraeve, Robin  
    ;
    Mertens, Paul  
    ;
    Heyns, Marc  
    ;
    Jeon, J. S.
    ;
    Halliyal, A.
    ;
    Ogle, B.
    Journal article
    1999, J. Appl. Phys., (86) 11, p.6462-6467
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    Soft breakdown in very thin Ta2 O5 gate dielectric layers

    Houssa, Michel  
    ;
    Mertens, Paul  
    ;
    Heyns, Marc  
    ;
    Heon, J. S.
    ;
    Halliyal, A.
    ;
    Ogle, B.
    Journal article
    2000, Solid-State Electronics, (44) 3, p.521-525

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