Browsing by Author "Hamilton, B."

Now showing 1 - 5 of 5

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

Hamilton, B.
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Ferhah, K.
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Davidson, J.
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Dawson, P.
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Whittaker, E.
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Cheng, T. S.
;
Foxon, C. T.
Meeting abstract
1999, 3rd International Conference on Nitride Semiconductors - ICS3, 04/07/1999, p.131
Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate

Volkos, S.N.
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Bernardini, S.
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Rigopoulos, N.
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Efthymiou, E.S.
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Hawkins, I.D.
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Hamilton, B.
Journal article
2007, Microelectronic Engineering, (84) 9_10, p.2374-2377
Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

Harris, J. J.
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Lee, K. J.
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Harrison, I.
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Flannery, L. B.
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Korakakis, D.
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Cheng, T.
;
Foxon, C. T.
Meeting abstract
1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.126
Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD

Harris, J. J.
;
Lee, K. J.
;
Harrison, I.
;
Flannery, L. B.
;
Korakakis, D.
;
Cheng, T. S.
;
Foxon, C. T.
Journal article
1999, Physica Status Solidi A, (176) 1, p.363-367
Nanoscale imaging and x-ray spectroscopy of electrically active defects in ultra thin dielectrics on silicon

Bernardini, S.
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Ishii, M.
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Whittaker, E.
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Hamilton, B.
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Freeland, C.
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Poolton, N.R.J.
Journal article
2007, Microelectronic Engineering, (84) 9_10, p.2286-2289