Browsing by Author "Hayama, Kiyoteru"
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Publication Assessment of radiation induced lattice damage in shallow trench isolation diodes irradiated by neutrons
Oral presentation2000, BIAMS - 6th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors; 12-16 November 2000; FukuoPublication Defect assessment of irradiated STI Diodes
Journal article2002, Nuclear Instruments & Methods in Physics Research B, (186) 1_4, p.424-428Publication Defect assessment of irradiated STI diodes
Oral presentation2001, Symposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices; June 5-8, 2001; Strasbourg,Publication Degradation and recovery of In0.53Ga0.47As photodiodes by 1-MeV fast neutrons
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Kudou, T.Hakata, T.Journal article1996, IEEE Transactions on Nuclear Devices, (43) 6, pt.1, p.3019-26Publication Degradation and recovery of proton irradiated Si1-xGe x epitaxial devices
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Sunaga, H.Nashiyama, I.Journal article1996, IEEE Transactions on Nuclear Devices, (43) 6, pt.1, p.3089-96Publication Degradation and recovery of Si1-xGex devices after proton irradiation
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Sunaga, H.Nashiyama, I.Oral presentation1996, Materials Research Society Spring Meeting. Symposium F on GeSi and Related Compounds; April 9-11, 1996; San Francisco, Calif., UPublication Degradation and recovery of Si1-xGex devices by irradiation
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Kudo, T.Hakata, T.Proceedings paper1995, Strained Layer Epitaxy - Materials, Processing and Device Applications, 17/04/1995, p.365-371Publication Degradation of InGaAs pin photodiodes by neutron irradiation
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Kudou, T.Kohiki, S.Journal article1996, Semiconductor Science and Technology, (11) 10, p.1461-1463Publication Degradation of Si1-xGex epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons
Journal article1995, IEEE Trans. Nuclear Science, (42) 6, pt.1, p.1550-1557Publication Degradation of Si1-xGex epitxial devices by proton irradiation
Journal article1996, Applied Physics Letters, (69) 16, p.2429-31Publication Degradation of SiGe devices by proton irradiation
;Ohyama, Hidenori ;Vanhellemont, Jan ;Takami, Y. ;Hayama, Kiyoteru ;Sunaga, H.Nahsiyama, I.Proceedings paper1997, Recent Progress in Accelerator Beam Application. Proceedings of the 7th International Symposium on Advanced Nuclear Energy Resea, 18/03/1996, p.212-217Publication Effect of radiation source on the degradation in irradiated Si1-xGex epitaxial devices
Journal article1996, Phys. Stat. Sol. A, (155) 1, p.147-55Publication Electron-irradiation effects of CMOS integrated circuits with leakage current compensation
Proceedings paper2000, Proceedings of the RADECS Workshop - Les Actes des Journees Techniques du RADECS, 11/09/2000, p.168-171Publication High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation
Proceedings paper2000, Proceedings 2nd ENDEASD Workshop, 27/06/2000, p.193-203Publication Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes
Proceedings paper1998, 2nd International Conference on Materials for Microelectronics - ICMM, 14/09/1998, p.11-18Publication Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes
Journal article1999, Journal of Materials Science: Materials in Electronics, (10) 5_6, p.335-337Publication Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
Journal article2004, Japanese J. of Appl. Phys. Part 1, (43) 12, p.7984-7992Publication Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers
;Ohyama, Hidenori; ;Claeys, Cor ;Takami, Y. ;Hayama, Kiyoteru ;Hakata, T.Tokuyama, J.Proceedings paper1998, Epitaxy and Applications of Si-Based Heterostructures, 13/04/1998, p.99-104Publication Influence of irradiation temperature on electron-irradiated STI Si diodes
Proceedings paper2002, Proceedings of the 4th International Conference on Materials for Microelectronics, 10/06/2002, p.299-302Publication Influence of the substrate on the degradation of irradiated Si diodes
Journal article1996, Physica Status Solidi A, 156, p.215-223
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