Browsing by Author "Hollaender, Bernd"
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Publication Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
;Morschbacher, Mario ;da Silva, Douglas ;Fichtner, Paulo ;Zawislak, FernandoHollaender, BerndOral presentation2004, MRS Spring meeting Symposium B: High-Mobility Group-IV Materials and DevicesPublication Fabrication, doping and characterization of strained silicon on SiO2 by ion beam techniques
Oral presentation2008, 16th International Conference on Ion Beam Modifications of MaterialsPublication Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(110) and Si(110)
Meeting abstract2010, 17th International Conference on Ion Beam Modification of Materials - IBMM, 22/08/2010Publication Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
;Hueging, Norbert ;Luysberg, Martina ;Urban, Knut ;Buca, Dan ;Hollaender, BerndMantl, SiegfriedProceedings paper2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.97-102Publication The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures
;Luysberg, Martina ;Hueging, Norbert ;Lenk, Steffi ;Buca, DanHollaender, BerndOral presentation2004, MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices