Browsing by Author "Hueging, Norbert"

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Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources

Hueging, Norbert
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Luysberg, Martina
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Urban, Knut
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Buca, Dan
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Hollaender, Bernd
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Mantl, Siegfried
Proceedings paper
2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.97-102
The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures

Luysberg, Martina
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Hueging, Norbert
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Lenk, Steffi
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Buca, Dan
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Hollaender, Bernd
Oral presentation
2004, MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices
The use of ion implantation of strained silicon on SiO2 for nanoelectronic devices

Mantl, S.
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Buca, Dan
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Hollander, Bernd
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Trinkaus, Helmut
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Hueging, Norbert
;
Luysberg, Martina
Proceedings paper
2005, MRS Fall Meeting Symposium OO: Growth, Modification, and Analysis by Ion Beams at the Nanoscale, 28/11/2005