Browsing by Author "Idemoto, Tatsuya"
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Publication Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
Journal article2012, Materials Science Forum, 725, p.235-238Publication Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices
;Tsunoda, Isao ;Nakashima, Toshiyuki ;Naka, Noboyuki ;Idemoto, TatsuyaYoneoka, MasahiJournal article2012, Physica Status Solidi C, (9) 10_11, p.2058-2061