Browsing by Author "Jabs, Dominic"
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Publication First–principles parameter–free modeling of n– and p–FET hot–carrier degradation
Proceedings paper2019, IEEE International Electron Device Meeting – IEDM, 7/12/2019, p.24.1.1-24.1.4Publication Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
Journal article2019, IEEE Transactions on Electron Devices, (66) 1, p.241-248Publication Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Journal article2020, IEEE Transactions on Electron Devices, (67) 8, p.3315-3322Publication Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Journal article2021-01, PHYSICAL REVIEW APPLIED, (16) 1, p.014026-1-014026-24