Browsing by Author "Jacobs, B."
Now showing 1 - 8 of 8
- Results Per Page
- Sort Options
Publication Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN
Oral presentation1999, Semiconductor and Integrated Optoelectronics - SIOEPublication Highly chemical reactive ion etching of gallium nitride
Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5S1, p.W11.76Publication Highly chemical reactive ion etching of gallium nitride
Publication Ideal chemistry for reactive ion etching of GaN
Oral presentation1999, LEOS Workshop; Amsterdam.Publication Ideal chemistry for reactive ion etching of GaN
Oral presentation1999, 1st Workshop on GaN Electronic DevicesPublication Implementation approaches for spare capacity in meshed WDM transport networks
Proceedings paper1997, Proceedings of the Annual Symposium of the IEEE/LEOS Benelux Chapter; November 26, 1997. Eindhoven, The Netherlands., p.97-100Publication Investigation on p-contacts in Mg-doped GaN and the effect of various pre-treatments
Proceedings paper2001, Proceedings Symposium 6th IEEE/LEOS Benelux Chapter, 3/12/2001, p.101-104Publication Side-wall morphology in reactive ion etching of GaN
Proceedings paper1999, Proceedings of the 4th Annual Symposium IEEE/LEOS Benelux Chapter, 15/11/1999, p.215-217