Browsing by Author "Jacobs, B."
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Publication Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN
Oral presentation1999, Semiconductor and Integrated Optoelectronics - SIOEPublication Highly chemical reactive ion etching of gallium nitride
Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5S1, p.W11.76Publication Highly chemical reactive ion etching of gallium nitride
;Karouta, F. ;Jacobs, B. ;Moerman, I. ;Jacobs, K. ;Weyher, J.L. ;Porowski, S. ;Crane, R.Hageman, P.R.Proceedings paper2000, GaN and Related Alloys, 28/11/1999, p.W11.76Publication Ideal chemistry for reactive ion etching of GaN
Oral presentation1999, 1st Workshop on GaN Electronic DevicesPublication Ideal chemistry for reactive ion etching of GaN
Oral presentation1999, LEOS Workshop; Amsterdam.Publication Implementation approaches for spare capacity in meshed WDM transport networks
Proceedings paper1997, Proceedings of the Annual Symposium of the IEEE/LEOS Benelux Chapter; November 26, 1997. Eindhoven, The Netherlands., p.97-100Publication Investigation on p-contacts in Mg-doped GaN and the effect of various pre-treatments
Proceedings paper2001, Proceedings Symposium 6th IEEE/LEOS Benelux Chapter, 3/12/2001, p.101-104Publication Side-wall morphology in reactive ion etching of GaN
Proceedings paper1999, Proceedings of the 4th Annual Symposium IEEE/LEOS Benelux Chapter, 15/11/1999, p.215-217