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Browsing by Author "Jacobs, K."

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    Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

    Jacobs, K.
    ;
    Van Daele, B.
    ;
    Leys, Maarten
    ;
    Moerman, Ingrid  
    ;
    Van Tendeloo, G.
    Journal article
    2003, Journal of Crystal Growth, 248, p.498-502
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    Highly chemical reactive ion etching of gallium nitride

    Karouta, F.
    ;
    Jacobs, B.
    ;
    Moerman, I.
    ;
    Jacobs, K.
    ;
    Weyher, J.L.
    ;
    Porowski, S.
    ;
    Crane, R.
    ;
    Hageman, P.R.
    Proceedings paper
    2000, GaN and Related Alloys, 28/11/1999, p.W11.76
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    Lattice expansion induced by Zn channeled implantation in GaN

    Ding, F.R.
    ;
    He, W.H.
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    Vantomme, Andre  
    ;
    Zhao, Q.
    ;
    Pipeleers, B.
    ;
    Jacobs, K.
    ;
    Moerman, Ingrid  
    Journal article
    2002, Materials Science in Semiconductor Processing, (5) 6, p.511-514
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    Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS

    Ding, F.R.
    ;
    He, W.
    ;
    Vantomme, Andre  
    ;
    Zhao, Q.
    ;
    Pipeleers, B.
    ;
    Jacobs, K.
    ;
    Moerman, Ingrid  
    Journal article
    2003, Materials Science and Engineering B, (98) 1, p.70-73

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