Browsing by Author "Jiang, Haojie"
Now showing 1 - 2 of 2
- Results per page
- Sort Options
Publication Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
Journal article2021, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, p.229-235Publication Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal