Browsing by Author "Jungemann, Christoph"

Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON current

First–principles parameter–free modeling of n– and p–FET hot–carrier degradation

Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory

Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities

Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools" Foreword

TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's