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Browsing by Author "Katcki, J."

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    Accurate extraction of the diffusion line current in silicon p-n junction diodes

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Czerwinski, A.
    ;
    Katcki, J.
    Journal article
    1998, Applied Physics Letters, (72) 9, p.1054-1056
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    Electrical characterisation of shallow cobalt-silicided junctions

    Simoen, Eddy  
    ;
    Poyai, Amporn
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    Claeys, Cor
    ;
    Lukyanchikova, N.
    ;
    Petrichuk, M.
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    Garbar, N.
    Proceedings paper
    2000, 3rd International Conference Materials for Microelectronics, 16/10/2000, p.7-10
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    Electrical characterization of shallow cobalt-silicided junctions

    Simoen, Eddy  
    ;
    Poyai, Amporn
    ;
    Claeys, Cor
    ;
    Lukyanchikova, N.
    ;
    Petrichuk, M.
    ;
    Garbar, N.
    Journal article
    2001, Journal of Materials Science: Materials in Electronics, (12) 4_6, p.207-10
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    Extraction of accurate lifetime and doping profiles in Si p-n junction diodes

    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Czerwinski, A.
    ;
    Tomaszewski, D.
    ;
    Gibki, J.
    ;
    Bakowski, A.
    ;
    Katcki, J.
    Meeting abstract
    1997, Belgische Natuurkundige Vereniging / Société Belge de Physique : General Scientific Meeting, 29/05/1997, p.CM35
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    Impact of fast neutron irradiation on the silicon p-n junction leakage and role of the diffusion reverse current

    Czerwinski, A.
    ;
    Katcki, J.
    ;
    Ratajczak, J.
    ;
    Simoen, Eddy  
    ;
    Poyai, Amporn
    ;
    Claeys, Cor
    Oral presentation
    2001, Symposium B of the E-MRS Spring Meeting 2001: Defect Engineering of Advanced Semiconductor Devices; June 5-8, 2001; Strasbourg,
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    Impact of fast-neutron irradiation on the silicon P-N junction leakage and role of the diffusion reverse current

    Czerwinski, A.
    ;
    Katcki, J.
    ;
    Ratajczak, J.
    ;
    Simoen, Eddy  
    ;
    Poyai, Amporn
    ;
    Claeys, Cor
    Journal article
    2002, Nuclear Instruments & Methods in Physics Research B, (186) 1_4, p.166-170
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    Optimised diode analysis of electrical silicon substrate properties

    Czerwinski, A.
    ;
    Tomaszewski, D.
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    Gibki, J.
    ;
    Bakowski, A.
    ;
    Klima, K.
    ;
    Katcki, J.
    ;
    Simoen, Eddy  
    Proceedings paper
    1997, Crystalline Defects and Contamination Control: Their Impact and Control in Device Manufacturing II, 31/08/1997, p.218-227
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    Optimised diode assessment of the surface and bulk generation/recombination properties of silicon substrates

    Simoen, Eddy  
    ;
    Poyai, Amporn
    ;
    Claeys, Cor
    ;
    Czerwinski, A.
    ;
    Katcki, J.
    Proceedings paper
    1998, Semiconductor Silicon 1998. Proceedings of the 8th International Symposium on Silicon Materials Science and Technology, 4/05/1998, p.1576-1592
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    Optimized diode analysis of electrical silicon substrate properties

    Czerwinski, A.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Klima, K.
    ;
    Tomaszewski, D.
    ;
    Gibki, J.
    ;
    Katcki, J.
    Journal article
    1998, Journal of the Electrochemical Society, (145) 6, p.2107-2112
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    p-n junction diagnostics to determine surface and bulk generation/recombination properties of silicon substrates

    Claeys, Cor
    ;
    Poyai, Amporn
    ;
    Simoen, Eddy  
    ;
    Czerwinski, A.
    ;
    Katcki, J.
    Journal article
    1999, J. Electrochem. Soc., (146) 3, p.1151-1157
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    Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities

    Czerwinski, A.
    ;
    Katcki, J.
    ;
    Poyai, Amporn
    ;
    Simoen, Eddy  
    ;
    Claeys, C.
    ;
    Ratajczak, J.
    Oral presentation
    2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced Cha
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    Statistical analysis of shallow P-N junction leakage increase using XTEM results probabilities

    Czerwinski, A.
    ;
    Katcki, J.
    ;
    Poyai, Amporn
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Ratajczak, J.
    Journal article
    2001, Materials Science in Semiconductor Processing, (4) 1_3, p.105-107

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