Browsing by Author "Keppens, Bart"
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Publication A 180nm secondary electron injection flash device
Proceedings paper2001, IEEE Non-Volatile Semiconductor Memory Workshop, 12/08/2001, p.62-63Publication Contributions to standardization of transmission line pulse testing methodology
Proceedings paper2001, Electrical Overstress/Electrostratic Discharge Syymposium Proceedings - EOS/ESD, p.461-467Publication Design and analysis of new protection structures for smart power technology with controlled trigger and holding voltage
Proceedings paper2001, 39th Annual International Reliability Physics Symposium; 30 April - 3 May 2001; Orlando, FL, USA., p.253-258Publication ESD reliability issues in RF CMOS circuits
Proceedings paper2002, Proceedings of the International Workshop on Semiconductor devices, 11/12/2001, p.551-556Publication Influence of device geometry on ESD performance for deep submicron CMOS technology
Proceedings paper1999, Tagungsband 6th ESD-Forum; October 1999; München, Germany., p.83-93Publication Influence of gate length on ESD performance for deep submicron CMOS technology
Proceedings paper1999, Electrical Overstress/Electrostatic Discharge Symposium Proceedings - EOS-ESD, 28/09/1999, p.95-104Publication Influence of gate length on ESD-performance for deep submicron CMOS technology
Journal article2001, Microelectronics Reliability, (41) 3, p.375-383Publication Significance of the failure criterion on transmission line pulse testing
Journal article2002, Microelectronics Reliability, (42) 6, p.901-907Publication Study of secondary electron injection phenomena in deep sub-micron MOSFETs and flash cells
Proceedings paper2000, Proceedings of the 30th European Solid-State Device Research Conference - ESSDERC, 11/09/2000, p.144-147