Browsing by Author "Kilchytska, V."
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Publication Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
Journal article2005, Microelectronic Engineering, 80, p.386-389Publication FinFET analogue characterization from DC to 110 GHz
Journal article2005, Solid-State Electronics, (49) 5, p.1488-1496Publication Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Journal article2011, Solid-State Electronics, (59) 1, p.18-24Publication High-energy neutrons effect on strained and non-strained SO MuGFETs and planar MOSFETs
; ; Publication In-depth investigation of 0.13 μm SOI MOSFETs for high-temperature applications
Proceedings paper2004, Proceedings Ultimate Integration of Silicon (ULIS) Workshop, 11/03/2004, p.163-166Publication Influence of device engineering on the analog and RF performances of SOI MOSFETs
Publication Influence of HALO implantation on analog performance and comparison between bulk, partially-depleted and fully-depleted MOSFET's
Proceedings paper2002, IEEE International SOI Conference, 7/10/2002, p.161-162Publication Investigation of charge control related performances in double-gate SOI MOSFETs
Proceedings paper2003, Silicon-on-Insulator Technology and Devices XI, 28/04/2003, p.225-230Publication Total-dose effects caused by high-energy neutrons and gamma-rays in multiple-gate FETs
Journal article2010, IEEE Transactions on Nuclear Science, (57) 4, p.1764-1770Publication Total-dose effects caused by high-energy neutrons and g-rays in multiple-gate FETs
Proceedings paper2009, 10th European Conference on Radiation and Its Effects on Components and Systems - RADECS, 14/09/2009