Browsing by Author "Kobayashi, Daisuke"
- Results Per Page
- Sort Options
Publication Analog performance of 60 MeV proton-irradiated SOI MuGFETs with different strain technologies
Proceedings paper2011, 7th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 17/01/2011, p.61-62Publication Combined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers
Meeting abstract2010-10, 218th ECS Meeting, 10/10/2010, p.1571Publication Combined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers
Proceedings paper2010, High Purity Silicon 11, 10/10/2010, p.191-202Publication Growth and processing defects in CMOS homo- and hetero-epitaxy
Proceedings paper2011, China Semiconductor Technology International Conference - CSTIC, 13/03/2011, p.761-768Publication High doping density/high electric field, stress and heterojunction effects on the characteristisc of CMOS compatible p-n junctions
Journal article2011, Journal of the Electrochemical Society, (158) 5, p.R27-R36Publication High doping/high electric field effects on the characteristics of CMOS compatible p-n junctions
Proceedings paper2010, Microelectronics Technology and Devices - SBMICRO 2010, 6/09/2010, p.307-318Publication Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
Journal article2011, IEEE Transactions on Electron Devices, (58) 8, p.2362-2370Publication Impact of process variability on the radiation-induced soft error rate of decananometer SRAMs in hold and read conditions
Proceedings paper2011, European Conference on Radiation Effects on Component and Systems - RADECS, 19/09/2011, p.195-201Publication Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
Proceedings paper2010, 11th European Conference on Radiation and its Effects on Components and Systems - RADECS, 20/09/2010Publication Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
Journal article2011, IEEE Transactions on Nuclear Science, (58) 3, p.800-807