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Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
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Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Luque Rodriguez, Abraham
;
Bargallo Gonzalez, Mireia
;
Eneman, Geert
;
Claeys, Cor
;
Kobayashi, Daisuke
;
Simoen, Eddy
;
Jiménez Tejada, Juan A.
Journal
IEEE Transactions on Electron Devices
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Acq. date: 2025-12-10
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Downloads
1
since deposited on 2021-10-19
Acq. date: 2025-12-10
Views
1896
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-10
Citations