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Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions

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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5218-4046
cris.virtual.orcid0000-0002-5849-3384
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.departmentdb73cf2d-2000-429c-bc92-553a1ef3e876
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orciddb73cf2d-2000-429c-bc92-553a1ef3e876
dc.contributor.authorLuque Rodriguez, Abraham
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorEneman, Geert
dc.contributor.authorClaeys, Cor
dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJiménez Tejada, Juan A.
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-19T15:48:47Z
dc.date.available2021-10-19T15:48:47Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19347
dc.source.beginpage2362
dc.source.endpage2370
dc.source.issue8
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume58
dc.title

Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions

dc.typeJournal article
dspace.entity.typePublication
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