Browsing by Author "Kobayashi, Kazutoshi"
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Publication An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
Journal article2021, IEICE ELECTRONICS EXPRESS, (18) 6, p.20210059Publication Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations
Proceedings paper2015, International Conference on IC Design & Technology - ICICDT, 1/06/2015, p.1-4Publication Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process
Journal article2019, IEICE Electronics Express, (16) 22, p.20190516Publication Monolithically integrated E-mode GaN-on-SOI gate driver with power GaN-HEMT for MHz-switching
Proceedings paper2018, IEEE 6th Workshop on Wide Bandgap Power Devices and Applications - WiPDA, 31/10/2018, p.231-236Publication Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors
Proceedings paper2019, 49th European Solid-State Device Research Conference, 23/09/2019, p.158-161Publication Monolithically integrated gate driver for MHz switching with an external inductor as a a current source
Proceedings paper2019, 2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL), 17/06/2019, p.PS1.19-1-PS1.19-6Publication Physical-based RTN modeling of ring oscillators in 40-nm SiON and 28-nm HKMG by bimodal defect-centric behaviors
Proceedings paper2016, 21st International Conference on Simulation of Semiconductor Processes and Process - SISPAD, 13/06/2016, p.327-330