Browsing by Author "Kobayashi, Masaharu"
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Publication High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
; ; ; Publication High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
; ; ; Publication On the high-field transport and uniaxial stress effect in Ge PFETs
Journal article2011, IEEE Transactions on Electron Devices, (58) 2, p.384-391Publication Si1-xGex-channel PFETs: scalability, layout considerations and compatibility with other stress techniques
Proceedings paper2011, Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3, 1/05/2011, p.493-503