Browsing by Author "Kol'dyaev, Victor"
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Publication 0.13µm CMOS technology with optimized poly-Si / NO-oxide gate stack
Proceedings paper1999, ULSI Process Integration. Proceedings of the First International Symposium, 17/10/1999, p.193-202Publication A comprehensive closed-form model for the quantized accumulation layer in MOS structures
Journal article1998, Solid-State Electronics, (42) 1, p.49-56Publication A comprehensive model of a VLSI spiral inductor from the first principles
Proceedings paper1998, Simulation of Semiconductor Processes and Devices 1998 - SISPAD 98, 2/09/1998, p.34-37Publication A high-accuracy comprehensive high-frequency model of a VLSI spiral inductor
Proceedings paper1998, Proceedings of the 28th European Solid-State Device Research Conference - ESSDERC'98; 8-10 Sept. 1998; Bordeaux, France., p.640-643Publication Characterisation of the overlap capacitance of submicron LDD MOSFETs
Proceedings paper1995, 25th European Solid State Device Research Conference - ESSDERC, 25/09/1995, p.757-760Publication Closed-form frequency dependent gate-to-channel capacitance model for submicron MOSFET's
Proceedings paper1996, Proceedings of the 26th European Solid-State Device Research Conference - ESSDERC, 9/09/1996, p.679-82Publication Closed-form model of the subhalfmicrometer LDD MOSFET overlap capacitance
Publication Gate stack optimisation for advanced CMOS process
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.412-415Publication Impact of substrate resistivity on the high frequency performance of metal interconnect
Proceedings paper1999, Proceedings of the International Interconnect Technology Conference - IITC; San Francisco, CA, USA., p.242-244Publication Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon
Kol'dyaev, VictorProceedings paper1995, 18th International Semiconductor Conference. CAS'95 Proceedings, 10/10/1995, p.125-128Publication Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness
Journal article1998, Journal of Applied Physics, (83) 4, p.2131-2138Publication Non-linear Frenkel and Pool effects
Kol'dyaev, VictorProceedings paper1997, Noise in Physical Systems and 1/f Fluctuations: Proceedings of the 14th International Conference, 14/07/1997, p.633-636Publication Nonlinear Frenkel and Poole effects
Kol'dyaev, VictorJournal article1999, Philsophical Magazine B, (79) 2, p.331-342Publication Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures
Kol'dyaev, VictorJournal article1995, Nuclear Instruments and Methods in Physics Research B, (103) 4, p.446-53