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Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures
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1987 since deposited on 2021-09-29
2last month
Acq. date: 2025-12-15
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1987 since deposited on 2021-09-29
2last month
Acq. date: 2025-12-15
Citations