Publication:
Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures
Date
| dc.contributor.author | Kol'dyaev, Victor | |
| dc.date.accessioned | 2021-09-29T13:08:26Z | |
| dc.date.available | 2021-09-29T13:08:26Z | |
| dc.date.embargo | 9999-12-31 | |
| dc.date.issued | 1995 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/705 | |
| dc.source.beginpage | 446 | |
| dc.source.endpage | 53 | |
| dc.source.issue | 4 | |
| dc.source.journal | Nuclear Instruments and Methods in Physics Research B | |
| dc.source.volume | 103 | |
| dc.title | Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | Original bundle
| |
| Publication available in collections: |