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Browsing by Author "Komura, Masanori"

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    Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications

    Fantini, Andrea  
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    Goux, Ludovic  
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    Clima, Sergiu  
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    Degraeve, Robin  
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    Redolfi, Augusto  
    Proceedings paper
    2014, IEEE 6th International Memory Workshop - IMW, 18/05/2014, p.1-4
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    Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

    Chen, Yangyin  
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    Komura, Masanori
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    Degraeve, Robin  
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    Govoreanu, Bogdan  
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    Goux, Ludovic  
    Proceedings paper
    2013, International Electron Deives Meeting - IEDM, 9/12/2013, p.352-355
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    Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

    Chen, Yangyin  
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    Roelofs, Robin
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    Redolfi, Augusto  
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    Degraeve, Robin  
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    Crotti, Davide  
    Proceedings paper
    2014, IEEE Symposium on VLSI Technology, 9/06/2014, p.166-167
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    Understanding the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation

    Goux, Ludovic  
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    Fantini, Andrea  
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    Degraeve, Robin  
    ;
    Raghavan, Naga
    ;
    Nigon, Robin
    Proceedings paper
    2013, VLSI Technology Symposium, 11/06/2013, p.162-163

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