Browsing by Author "Kuball, Martin"
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Publication Determination of the self-compensation ratio of carbon in AlGaN for HEMTs
Journal article2018, IEEE Transactions on Electron Devices, (65) 5, p.1838-1842Publication Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors
;Schuller, Tim A. ;Kuball, Martin ;Flower, Stephen E. ;James, Tony D. ;Fossey, John S.Journal article2011, Sensors and Actuators B: Chemical, (160) 1, p.1078-1081Publication Flip chip mounting for improved thermal management of AlGaN/GaN HFETs
Oral presentation2005, Materials Research Society (MRS) Fall Meeting Symposium FF: GaN, AlN, InN, and Related MaterialsPublication GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS
Proceedings paper2013, CS Mantech Conference, 13/05/2013, p.195-197Publication GaN on polycrystalline AlN substrates for power device applications
Meeting abstract2018, International workshop on Nitride Semiconductors - IWN, 11/11/2018, p.ThP-CR-35Publication Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective
;Ji, Hangfeng ;Das, Jo ;Germain, MarianneKuball, MartinJournal article2009, Solid-State Electronics, 53, p.526-529Publication Localization of off-stress-induced damage in AlGaNGaN HEMTs by means of low frequency 1/f noise measurements
Journal article2013, Applied Physics Letters, (103) 4, p.43506Publication Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors
Journal article2020, IEEE Electron Device Letters, (41) 12, p.1754-1757Publication Self-compensation of carbon in AlGaN
Meeting abstract2018-08, 7th International Symposium of Growth of III-Nitrides - ISGN-7, 5/08/2018, p.Fr3.3Publication Surface-charge lithography for the fabrication of gallium nitride based gas sensors
;Schuller, Tim ;Heard, Peter ;Popa, Veaceslav ;Volciuc, Olesea ;Tiginyanu, IonDas, JoMeeting abstract2009, MRS Fall Meeting Symposium I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, 30/11/2009, p.I6.7Publication The 2018 GaN power electronics roadmap
Journal article2018, Journal of Physics D: Applied Physics, (51) 16, p.163001-01-163001-48Publication The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown
Journal article2018, IEEE Electron Device Letters, (39) 10, p.1580-1583Publication Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs
;Zhou, Yan ;Ramaneti, Rajesh ;Anaya, Julian ;Korneychuk, Svetlana ;Derluyn, JoffSun, HuareiJournal article2017, Applied Physics Letters, (111) 4, p.41901Publication Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
Journal article2024, APPLIED PHYSICS LETTERS, (125) 9, p.Art. 093505