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Browsing by Author "Kuball, Martin"

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    Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

    Rackauskas, Ben
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    Uren, Michael
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    Stoffels, Steve  
    ;
    Zhao, Ming  
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    Decoutere, Stefaan  
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    Kuball, Martin
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 5, p.1838-1842
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    Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors

    Schuller, Tim A.
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    Kuball, Martin
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    Flower, Stephen E.
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    James, Tony D.
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    Fossey, John S.
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    Marcon, Denis  
    Journal article
    2011, Sensors and Actuators B: Chemical, (160) 1, p.1078-1081
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    Flip chip mounting for improved thermal management of AlGaN/GaN HFETs

    Ji, Hangfeng
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    Sarua, A.
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    Kuball, Martin
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    Das, Johan
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    Ruythooren, Wouter  
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    Germain, Marianne
    Oral presentation
    2005, Materials Research Society (MRS) Fall Meeting Symposium FF: GaN, AlN, InN, and Related Materials
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    GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS

    Silvestri, Marco
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    Michael, Uren
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    Marcon, Denis  
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    Kuball, Martin
    Proceedings paper
    2013, CS Mantech Conference, 13/05/2013, p.195-197
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    GaN on polycrystalline AlN substrates for power device applications

    Yuan, Chao
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    Pomeroy, James W.
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    Uren, Michael J.
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    Geens, Karen  
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    Stoffels, Steve  
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    Kuball, Martin
    Meeting abstract
    2018, International workshop on Nitride Semiconductors - IWN, 11/11/2018, p.ThP-CR-35
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    Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective

    Ji, Hangfeng
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    Das, Jo
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    Germain, Marianne
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    Kuball, Martin
    Journal article
    2009, Solid-State Electronics, 53, p.526-529
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    Localization of off-stress-induced damage in AlGaNGaN HEMTs by means of low frequency 1/f noise measurements

    Silvestri, Marco
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    Uren, Michael
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    Killat, Nicolle
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    Marcon, Denis  
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    Kuball, Martin
    Journal article
    2013, Applied Physics Letters, (103) 4, p.43506
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    Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

    Wach, Filip
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    Uren, Michael J.
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    Bakeroot, Benoit  
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    Zhao, Ming  
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    Decoutere, Stefaan  
    ;
    Kuball, Martin
    Journal article
    2020, IEEE Electron Device Letters, (41) 12, p.1754-1757
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    Self-compensation of carbon in AlGaN

    Rackauskas, Ben
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    Michael, Uren
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    Stoffels, Steve  
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    Zhao, Ming  
    ;
    Decoutere, Stefaan  
    ;
    Kuball, Martin
    Meeting abstract
    2018-08, 7th International Symposium of Growth of III-Nitrides - ISGN-7, 5/08/2018, p.Fr3.3
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    Surface-charge lithography for the fabrication of gallium nitride based gas sensors

    Schuller, Tim
    ;
    Heard, Peter
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    Popa, Veaceslav
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    Volciuc, Olesea
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    Tiginyanu, Ion
    ;
    Das, Jo
    Meeting abstract
    2009, MRS Fall Meeting Symposium I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, 30/11/2009, p.I6.7
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    The 2018 GaN power electronics roadmap

    Amano, H.
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    Baynes, Y.
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    Beam, E.
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    Borga, Matteo  
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    Bouchet, T.
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    Chalker, Paul R.
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    Charles, M.
    Journal article
    2018, Journal of Physics D: Applied Physics, (51) 16, p.163001-01-163001-48
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    The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

    Rackauskas, Ben
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    J. Uren, Michael
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    Stoffels, Steve  
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    Zhao, Ming  
    ;
    Bakeroot, Benoit  
    Journal article
    2018, IEEE Electron Device Letters, (39) 10, p.1580-1583
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    Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Zhou, Yan
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    Ramaneti, Rajesh
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    Anaya, Julian
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    Korneychuk, Svetlana
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    Derluyn, Joff
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    Sun, Huarei
    Journal article
    2017, Applied Physics Letters, (111) 4, p.41901
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    Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

    Chen, Zequan
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    Uren, Michael J.
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    Huang, Peng
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    Sanyal, Indraneel
    ;
    Smith, Matthew D.
    ;
    Vohra, Anurag  
    Journal article
    2024, APPLIED PHYSICS LETTERS, (125) 9, p.Art. 093505

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