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Localization of off-stress-induced damage in AlGaNGaN HEMTs by means of low frequency 1/f noise measurements
Publication:
Localization of off-stress-induced damage in AlGaNGaN HEMTs by means of low frequency 1/f noise measurements
Date
2013
Journal article
https://doi.org/10.1063/1.4816424
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1.08 MB
Accepted version
485.58 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Silvestri, Marco
;
Uren, Michael
;
Killat, Nicolle
;
Marcon, Denis
;
Kuball, Martin
Journal
Applied Physics Letters
Abstract
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163
since deposited on 2021-10-21
Acq. date: 2025-10-26
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1936
since deposited on 2021-10-21
Acq. date: 2025-10-26
Citations
Metrics
Downloads
163
since deposited on 2021-10-21
Acq. date: 2025-10-26
Views
1936
since deposited on 2021-10-21
Acq. date: 2025-10-26
Citations