Browsing by Author "Kwo, J."

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Approaching Fermi level unpinning in oxide-In0.2Ga0.8As

Chiang, T.H.
;
Lee, W.C.
;
Lin, T.D.
;
Lin, Dennis
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Shiu, K.H.
;
Kwo, J.
;
Wang, W.E.
;
Tsai, W.
;
Hong, M.
Proceedings paper
2008, IEEE International Electron Devices Meeting - IEDM, 15/12/2008, p.375-378
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation

Merckling, Clement
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Chang, Y.C.
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Lu, C.Y.
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Penaud, J.
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Brammertz, Guy
;
Scarrozza, Marco
Journal article
2011, Surface Science, (605) 19_20, p.1778-1783
Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Chu, L.K.
;
Merckling, Clement
;
Alian, AliReza
;
Dekoster, Johan
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Kwo, J.
;
Hong, M.
;
Caymax, Matty
Journal article
2011, Applied Physics Letters, (99) 4, p.42908