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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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1878 since deposited on 2021-10-19
2last month
Acq. date: 2025-12-13
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Metrics
Views
1878 since deposited on 2021-10-19
2last month
Acq. date: 2025-12-13
Citations