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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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1874 since deposited on 2021-10-19
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Acq. date: 2025-10-25
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Views
1874 since deposited on 2021-10-19
417item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations