Publication:
Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
Date
| dc.contributor.author | Chu, L.K. | |
| dc.contributor.author | Merckling, Clement | |
| dc.contributor.author | Alian, AliReza | |
| dc.contributor.author | Dekoster, Johan | |
| dc.contributor.author | Kwo, J. | |
| dc.contributor.author | Hong, M. | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.author | Heyns, Marc | |
| dc.contributor.imecauthor | Merckling, Clement | |
| dc.contributor.imecauthor | Alian, AliReza | |
| dc.contributor.imecauthor | Dekoster, Johan | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.contributor.imecauthor | Heyns, Marc | |
| dc.contributor.orcidimec | Merckling, Clement::0000-0003-3084-2543 | |
| dc.date.accessioned | 2021-10-19T12:50:14Z | |
| dc.date.available | 2021-10-19T12:50:14Z | |
| dc.date.issued | 2011 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/18696 | |
| dc.source.beginpage | 42908 | |
| dc.source.issue | 4 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 99 | |
| dc.title | Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
| Publication available in collections: |