Browsing by Author "Kwong, D.-L."

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Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps

Sa, N.
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Kang, J.F.
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Yang, H.
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Liu, X.Y.
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He, Y.D.
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Han, R.Q.
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Ren, C.
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Yu, HongYu
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Chan, D.S.H.
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Kwong, D.-L.
Journal article
2005-09, IEEE Electron Device Letters, (9) 26, p.610-612
Practical solutions to enhance EWF tunability of Ni FUSI gate electrode on HfO2

Wang, X.P.
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Yang, J.J.
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Chen, J.D.
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Xie, R.L.
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Li, M.-F.
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Zhu, C.X.
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Yu, HongYu
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Du, A.Y.
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Lim, P.C.
Proceedings paper
2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2007, p.854-855