Browsing by Author "Laha, Apurba"
Now showing 1 - 3 of 3
- Results per page
- Sort Options
Publication Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
Journal article2023, JOURNAL OF APPLIED PHYSICS, (134) 24, p.Art. 244503Publication Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis
Journal article2024, JOURNAL OF APPLIED PHYSICS, (136) 16, p.Art. 164501Publication Role of Excited Surface States in Increasing IOFF in AlGaN/GaN HEMT: Effect of White Light Illumination and Elevated Temperature
Journal article2026, IEEE TRANSACTIONS ON ELECTRON DEVICES, (73) 1, p.208-214