Browsing by Author "Lanza, M."

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Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale

Bayerl, A.
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Porti, Marc
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Martin-Martinez, Javier
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Lanza, M.
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Rodriguez, Rosanna
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Velayudhan, V.
Proceedings paper
2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.5D4.1-5D4.6
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

Maldonado, D.
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Roldan, J. B.
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Roldan, A. M.
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Jimenez-Molinos, F.
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Hui, F.
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Jing, Xu
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Wen, C.
;
Lanza, M.
Proceedings paper
2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages

Roldan, J. B.
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Maldonado, D.
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Jimenez-Molinos, F.
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Acal, C.
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Ruiz-Castro, J. E.
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Aguilera, A. M.
Proceedings paper
2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020
Time series modeling of the cycle-to-cycle variability in h-BN based memristors

Roldan, J. B.
;
Maldonado, D.
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Alonso, F. J.
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Roldan, A. M.
;
Hui, F.
;
Jimenez-Molinos, F.
Proceedings paper
2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021