Browsing by Author "Lebedev, O."
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Publication A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
; Claeys, CorJournal article2003, Physica B, 340-342, p.1013-1017Publication Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
; Claeys, CorProceedings paper2002, High Purity Silicon VII, 20/10/2002, p.183-194Publication Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Journal article2001, Physica B, 308, p.294-297Publication Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Journal article1999, Physica Status Solidi B, (216) 1, p.571-576Publication Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon
Journal article2002, Journal of Physics - Condensed Matter, (14) 48, p.13185-13193Publication Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques
; Vanhellemont, JanJournal article2002, Journal of Applied Physics, (91) 4, p.2493-2498Publication Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Journal article1999, Physica B, 273-274, p.140-143Publication Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.124