Browsing by Author "Lederer, Dimitri"
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Publication Accurate effective mobility extraction by split C-V technique in SOI MOSFETs: suppression of the influence of floating-body effects
Journal article2005-10, IEEE Electron Device Letters, (26) 10, p.749-751Publication CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
Proceedings paper2021, International Conference on IC Design and Technology (ICICDT), SEP 15-17, 2021Publication FinFET analogue characterization from DC to 110 GHz
Journal article2005, Solid-State Electronics, (49) 5, p.1488-1496Publication Frequency variation of the small-signal output conductance of decananometer MOSFETs due to the substrate crosstalk
Journal article2007-05, IEEE Electron Device Letters, (28) 5, p.419-421Publication High-frequency noise performance of 60-nm gate-length FinFETs
Journal article2008, IEEE Transactions on Electron Devices, (55) 10, p.2718-2727Publication Perspective of FinFETs for analog applications
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 20/09/2004, p.65-68Publication Revised split C-V technique for mobility investigation in advanced devices
Proceedings paper2005, Proceedings of the IEEE International SOI Conference, 3/10/2005, p.110-111Publication Time Dependence of RF Losses in GaN-on-Si Substrates
Journal article2022-04-11, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, (32) 6, p.688-691