Browsing by Author "Lee, Seung Hun"
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Publication 15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Proceedings paper2014, Symposium on VLSI Technology, 9/06/2014, p.138-139Publication Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process
Proceedings paper2013-12, International Electron Devices Meeting - IEDM, 9/12/2013, p.534-537Publication Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.6.5