Browsing by Author "Li, Yongliang"
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Publication Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
;Zhou, Longda ;Wang, Guilei ;Yin, Xiaogen ;Ji, Zhigang ;Liu, Qianqian ;Xu, HaoYang, HongJournal article2020, MICROELECTRONICS RELIABILITY, 107Publication Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs
;Chang, Hao ;Zhang, Yongkui ;Zhou, Longda ;Ji, Zhigang ;Yang, Hong ;Liu, QianqianLi, YongliangProceedings paper2021, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), SEP 14-OCT 13, 2021Publication Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs
;Zhou, Longda ;Tang, Bo ;Yang, Ho; ;Li, Yongliang; ;Yin, HuaxiangZhu, HuilongProceedings paper2018, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 16/07/2018, p.1-6