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Browsing by Author "Li, Yongliang"

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    Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

    Zhou, Longda
    ;
    Wang, Guilei
    ;
    Yin, Xiaogen
    ;
    Ji, Zhigang
    ;
    Liu, Qianqian
    ;
    Xu, Hao
    ;
    Yang, Hong
    Journal article
    2020, MICROELECTRONICS RELIABILITY, 107
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    Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs

    Chang, Hao
    ;
    Zhang, Yongkui
    ;
    Zhou, Longda
    ;
    Ji, Zhigang
    ;
    Yang, Hong
    ;
    Liu, Qianqian
    ;
    Li, Yongliang
    Proceedings paper
    2021, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), SEP 14-OCT 13, 2021
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    Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs

    Zhou, Longda
    ;
    Tang, Bo
    ;
    Yang, Ho
    ;
    Xu, Hao  
    ;
    Li, Yongliang
    ;
    Simoen, Eddy  
    ;
    Yin, Huaxiang
    ;
    Zhu, Huilong
    Proceedings paper
    2018, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 16/07/2018, p.1-6

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