Browsing by Author "Liang, C."

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Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

Zhang, E. Z
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Fleetwood, D. M.
;
Hatchel, J. A.
;
Liang, C.
;
Reed, R.
;
Alles, M. L.
;
Schrimpf, R. D.
Journal article
2017, IEEE Transactions on Nuclear Science, (64) 1, p.226-232
Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

Gorchichko, M.
;
Cao, Y.
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Zhang, E.X.
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Yan, D.
;
Gong, H.
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Zhao, S.E.
;
Wang, P.
;
Jiang, R.
;
Liang, C.
Journal article
2020, IEEE Transactions on Nuclear Science, (67) 1, p.245-252