Browsing by Author "Lin, L."
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Publication A single pulse charge pumping technique for fast measurements of interface states
Journal article2011, IEEE Transactions on Electron Devices, (58) 5, p.1490-1498Publication A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Proceedings paper2015, VLSI Technology Symposium, 15/06/2015, p.T36-T37Publication Dominant layer for stress-induced positive charges in Hf-based gate stacks
; Pantisano, LuigiJournal article2008, IEEE Electron Device Letters, (29) 12, p.1360-1363Publication NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement
Journal article2010, IEEE Transactions on Electron Devices, (57) 1, p.228-237