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Browsing by Author "Lin, Tsann"

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    A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility

    Tomczak, Yoann  
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    Lin, Tsann
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    Swerts, Johan  
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    Couet, Sebastien  
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    Mertens, Sofie  
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    Liu, Enlong
    Meeting abstract
    2016, MMM Intermag, 11/01/2016
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    Annealing stability of magnetic tunnel junctions no dual MgO free layers and Co/Ni based synthetic antiferromagnetic reference system

    Devolder, Thibaut
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    Couet, Sebastien  
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    Swerts, Johan  
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    Liu, Enlong
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    Lin, Tsann
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    Mertens, Sofie  
    Journal article
    2017, Journal of Applied Physics, (121) 11, p.113904
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    BEOLC compatiblehigh tunnel magneto resistance perpendicula magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    Swerts, Johan  
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    Mertens, Sofie  
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    Lin, Tsann
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    Couet, Sebastien  
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    Tomczak, Yoann  
    Journal article
    2015, Applied Physics Letters, (106) 26, p.262407
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    CMP process steps for the fabrication of spin-transfer torque magnetic random access memory

    Tsvetanova, Diana  
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    Heylen, Nancy  
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    Teugels, Lieve  
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    Crotti, Davide  
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    Donadio, Gabriele Luca  
    Proceedings paper
    2016, 20th International Symposium on CMP at CAMP, 7/08/2016
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    [Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

    Liu, Enlong
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    Swerts, Johan  
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    Couet, Sebastien  
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    Mertens, Sofie  
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    Tomczak, Yoann  
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    Lin, Tsann
    Journal article
    2016, Applied Physics Letters, (108) 13, p.132405
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    Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy

    Liu, Enlong
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    Swerts, Johan  
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    Vaysset, Adrien
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    Devolder, Thibaut
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    Couet, Sebastien  
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    Mertens, Sofie  
    Proceedings paper
    2017, IEEE International Magnetics Conference - INTERMAG, 23/04/2017, p.1-2
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    Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy

    Liu, Enlong
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    Vaysset, Adrien
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    Swerts, Johan  
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    Devolder, Thibaut
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    Couet, Sebastien  
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    Mertens, Sofie  
    Journal article
    2017, IEEE Transactions on Magnetics, (53) 11, p.3401305
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    Cryogenic cooling post MgO promoting the free layer coercivity and TMR in perpendicular bottom pinned Co/Ni STT-MRAM device stacks

    Swerts, Johan  
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    Mertens, Sofie  
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    Couet, Sebastien  
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    Lin, Tsann
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    Liu, Enlong
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    Rao, Siddharth  
    Meeting abstract
    2016, 61st Annual Conference on Magnetism and Magnetic Materials, 31/10/2016
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    Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation

    Kim, Woojin  
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    Rao, Siddharth  
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    Van Beek, Simon  
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    Garello, Kevin  
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    Couet, Sebastien  
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    Swerts, Johan  
    Oral presentation
    2017, Intermag 2017
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    Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions

    Kim, Woojin  
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    Couet, Sebastien  
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    Swerts, Johan  
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    Lin, Tsann
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    Tomczak, Yoann  
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    Souriau, Laurent  
    Journal article
    2016, IEEE Transactions on Magnetics, (52) 7, p.3401004
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    Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy

    Devolder, Thibaut
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    Liu, Enlong
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    Swerts, Johan  
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    Couet, Sebastien  
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    Mertens, Sofie  
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    Lin, Tsann
    Meeting abstract
    2016, 61st Annual Conference on Magnetism and Magnetic Materials, 31/10/2016
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    Ferromagnetic resonance study of composite Co/Ni-FeCoB free layers with perpendicular anisotropy

    Devolder, Thibaut
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    Liu, Enlong
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    Swerts, Johan  
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    Couet, Sebastien  
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    Lin, Tsann
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    Mertens, Sofie  
    Journal article
    2016, Applied Physics Letters, (109) 14, p.142408
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    Free layer effective anisotropy thickness in high TMR top and bottom pinned perpendicular magnetic tunnel junctions

    Swerts, Johan  
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    Mertens, Sofie  
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    Lin, Tsann
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    Couet, Sebastien  
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    Tomczak, Yoann  
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    Liu, Enlong
    Meeting abstract
    2015, International Conference on Magnetism - ICM, 5/07/2015, p.WE.D.2_O3
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    Impact of processing and stack optimization on the reliability of perpendicular STT-MRAM

    Van Beek, Simon  
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    Martens, Koen  
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    Roussel, Philippe  
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    Couet, Sebastien  
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    Souriau, Laurent  
    Proceedings paper
    2017, IEEE International Reliability Physics symposium - IRPS, 2/04/2017, p.5A-1.1-5A-1.5
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    Impact of seed layer and its diffusion after annealing on properties of Co/Ni multilayers with perpendicular magnetic anisotropy

    Liu, Enlong
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    Swerts, Johan  
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    Devolder, Thibaut
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    Couet, Sebastien  
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    Mertens, Sofie  
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    Lin, Tsann
    Meeting abstract
    2016, 61st Annual Conference on Magnetism and Magnetic Materials, 31/10/2016
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    Impact of Ta and W-based spacers in double MgO STTMRAM free layers on perpendicular anisotropy and damping

    Couet, Sebastien  
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    Devolder, Thibaut
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    Swerts, Johan  
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    Mertens, Sofie  
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    Lin, Tsann
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    Liu, Enlong
    Journal article
    2017, Applied Physics Letters, (111) 15, p.152406
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    Influence of the reference layer composition on the back-end-of-line compatibility of Co/Ni-based perpendicular magnetic tunnel junction stacks

    Tomczak, Yoann  
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    Lin, Tsann
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    Swerts, Johan  
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    Couet, Sebastien  
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    Mertens, Sofie  
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    Liu, Enlong
    Journal article
    2016, IEEE Transactions on Magnetics, (52) 7, p.3400604
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    Magnetic tunnel junctions etch and encapsulation process optimization for high-density STT-MRAM applications

    Souriau, Laurent  
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    Radisic, Dunja  
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    Kundu, Shreya  
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    Paraschiv, Vasile  
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    Yamashita, Fumiko
    Meeting abstract
    2016, AVS 63rd International Symposium and Exhibition, 6/11/2016, p.PS-ThP33
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    Material developments and nanosecond-Scale Switching Process in

    Devolder, Thibaut
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    Swerts, Johan  
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    Couet, Sebastien  
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    Kim, Woojin  
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    Nikitin, Vladimir
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    Kim, Jon-Voo
    Proceedings paper
    2017, TMRC: the 28th Magnetic Recording Conference, 2/08/2017, p.C3
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    Oxygen scavenging by Ta spacers in double-MgO free layers for perpendicular spin-transfer torque magnetic random-access memory

    Couet, Sebastien  
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    Swerts, Johan  
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    Mertens, Sofie  
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    Lin, Tsann
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    Tomczak, Yoann  
    ;
    Liu, Enlong
    Journal article
    2016, IEEE Magnetics Letters, 7, p.3103004
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