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Browsing by Author "Mörschbächer, M."

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    Strain relaxation of pseudomorphic Si1-xGe/Si(100) heterostructures after Si+ ion implantation

    Holländer, B.
    ;
    Buca, D.
    ;
    Mörschbächer, M.
    ;
    Lenk, St.
    ;
    Mantl, S.
    ;
    Herzog, H.J.
    ;
    Hackbarth, Th.
    ;
    Loo, Roger  
    Journal article
    2004, Journal of Applied Physics, (96) 3, p.1745-1747
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    Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation

    Holländer, B.
    ;
    Buca, D.M.
    ;
    Lenk, S.
    ;
    Mantl, S.
    ;
    Herzog, H.J.
    ;
    Hackbarth, T.
    ;
    Loo, Roger  
    ;
    Caymax, Matty  
    Oral presentation
    2004, 14th International Conference on Ion Beam Modification of Materials - IBMM
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    Strained Si on relaxed SiGe made by ion implantation and strain transfer

    Mantl, S.
    ;
    Buca, D.
    ;
    Holländer, B.
    ;
    Mörschbächer, M.
    ;
    Trinkhaus, H.
    ;
    Luysberg, M.
    ;
    Hueging, N.
    Proceedings paper
    2004-10, SiGE: Materials, Processing, and Devices, 3/10/2004, p.731-740

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