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Strained Si on relaxed SiGe made by ion implantation and strain transfer
Publication:
Strained Si on relaxed SiGe made by ion implantation and strain transfer
Date
2004-10
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mantl, S.
;
Buca, D.
;
Holländer, B.
;
Mörschbächer, M.
;
Trinkhaus, H.
;
Luysberg, M.
;
Hueging, N.
;
Houben, L.
;
Carius, R.
;
Loo, Roger
;
Caymax, Matty
;
Schäfer, H.
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1914
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1914
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations